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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector Current -IC= 12A *Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 5A *Complement to Type BDV64/A/B/C APPLICATIONS *Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDV65 Collector-Base Voltage BDV65A BDV65B BDV65C BDV65 Collector-Emitter Voltage VALUE 60 80 100 120 60 UNIT BDV65/A/B/C VCBO V VCEO VEBO IC ICM IB B Emitter-Base Voltage w w BDV65A BDV65B BDV65C scs .i w 80 100 120 5 12 15 0.5 125 3.5 150 -65~150 V .cn mi e V A A A Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Collector Power Dissipation @ Ta=25 Junction Temperature Storage Temperature Range PC W TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 35.7 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDV65 BDV65A IC= 30mA; IB= 0 BDV65B BDV65C VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDV65 BDV65A ICBO Collector Cutoff Current IC= 5A; IB= 20mA B BDV65/A/B/C CONDITIONS MIN 60 80 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 100 120 2.0 2.5 2.0 V V mA IC= 5A; VCE= 4V VCE= 1/2VCEOmax; IB= 0 ICBO IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain ww w BDV65B BDV65C scs .i VCB= 40V; IE= 0;TJ= 150 VCB= 50V; IE= 0;TJ= 150 VCB= 60V; IE= 0;TJ= 150 VCB= 70V; IE= 0;TJ= 150 VCB= VCBOmax; IE= 0 VEB= 5V; IC= 0 IC= 5A; VCE= 4V .cn mi e 1000 2.0 mA 0.4 5 mA mA isc Websitewww.iscsemi.cn 2 |
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